Influence of microwave radiation on relaxation processes in silicon carbide / Bacherikov Yu. Yu., Goroneskul V. Yu., Gudymenko O. Yo., Kladko V. P., Kolomys O. F., Krishchenko I. M., Okhrimenko O. B., Strelchuk V. V. (2020)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0001151467
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2020, Vol. 23, № 2)
Bacherikov Yu. Yu., Goroneskul V. Yu., Gudymenko O. Yo., Kladko V. P., Kolomys O. F., Krishchenko I. M., Okhrimenko O. B., Strelchuk V. V.
Influence of microwave radiation on relaxation processes in silicon carbide
Cite:
Bacherikov, Yu. Yu., Goroneskul, V. Yu., Gudymenko, O. Yo., Kladko, V. P., Kolomys, O. F., Krishchenko, I. M., Okhrimenko, O. B., Strelchuk, V. V. (2020). Influence of microwave radiation on relaxation processes in silicon carbide. Semiconductor Physics, Quantum Electronics and Optoelectronics , 23 (2), 175-179. http://jnas.nbuv.gov.ua/article/UJRN-0001151467 | |
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