High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm / Kukurudziak, M. S., Andreeva, O. P., Lipka, V. M. (2020)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001194859
  Technology and design in electronic equipment   Б - 2020  /     Issue (2020, № 5-6)

Kukurudziak M. S., Andreeva O. P., Lipka V. M.
High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

Cite:
Kukurudziak, M. S., Andreeva, O. P., Lipka, V. M. (2020). High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm. Technology and design in electronic equipment, 5-6, 16-19. http://jnas.nbuv.gov.ua/article/UJRN-0001194859

 

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