Kinetic of photoluminescence of porous nc-Si–SiOx structures / Mikhajlovskaja, E. V., Danko, V. A., Indutnyj, I. Z., Shepeljavyj, P. E. (2012)
Ukrainian

English  Optoelectronics and Semiconductor Technique   /     Issue (2012, 47)

Mikhajlovskaja E. V., Danko V. A., Indutnyj I. Z., Shepeljavyj P. E.
Kinetic of photoluminescence of porous nc-Si–SiOx structures


Cite:
Mikhajlovskaja, E. V., Danko, V. A., Indutnyj, I. Z., Shepeljavyj, P. E. (2012). Kinetic of photoluminescence of porous nc-Si–SiOx structures. Optoelectronics and Semiconductor Technique, 47, 97-103. http://jnas.nbuv.gov.ua/article/UJRN-0001287284 [In Russian].

 

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