інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000349248
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2010, Vol. 13, № 2)
Fodchuk І. М., Dovganyuk V. V., Litvinchuk Т. V., Kladko V. P., Slobodian М. V., Gudymenko O. Yo., Swiatek Z.
Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
Cite:
Fodchuk, I. M., Dovganyuk, V. V., Litvinchuk, T. V., Kladko, V. P., Slobodian, M. V., Gudymenko, O. Yo., Swiatek, Z. (2010). Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (2), 209-213. http://jnas.nbuv.gov.ua/article/UJRN-0000349248
PDF