Double- and triple-crystal X-ray diffractometry of microdefects in silicon / Molodkin V. B., Olikhovskii S. I., Kyslovskyy Ye. M., Len E. G., Reshetnyk O. V., Vladimirova T. P., Lizunov V. V., Lizunova S. V. (2010)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000349374
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2010, Vol. 13, № 4)
Molodkin V. B., Olikhovskii S. I., Kyslovskyy Ye. M., Len E. G., Reshetnyk O. V., Vladimirova T. P., Lizunov V. V., Lizunova S. V.
Double- and triple-crystal X-ray diffractometry of microdefects in silicon
Cite:
Molodkin, V. B., Olikhovskii, S. I., Kyslovskyy, Ye. M., Len, E. G., Reshetnyk, O. V., Vladimirova, T. P., Lizunov, V. V., Lizunova, S. V. (2010). Double- and triple-crystal X-ray diffractometry of microdefects in silicon. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (4), 353-356. http://jnas.nbuv.gov.ua/article/UJRN-0000349374 | |
|
|
PDF