Optimal solution in producing 32nm CMOS technology transistor with desired leakage current / lgomati H. A., Ahmad I., Salehuddin F., Hamid F. A., Zaharim A., Majlis B. Y., Apte P. R. (2011)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000349484
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2011, Vol. 14, № 2)
lgomati H. A., Ahmad I., Salehuddin F., Hamid F. A., Zaharim A., Majlis B. Y., Apte P. R.
Optimal solution in producing 32nm CMOS technology transistor with desired leakage current
Cite:
lgomati, H. A., Ahmad, I., Salehuddin, F., Hamid, F. A., Zaharim, A., Majlis, B. Y., Apte, P. R. (2011). Optimal solution in producing 32nm CMOS technology transistor with desired leakage current. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (2), 145-151. http://jnas.nbuv.gov.ua/article/UJRN-0000349484 | |
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