Electrical properties of MIS structures with silicon nanoclusters / Bunak S. V., Ilchenko V. V., Melnik V. P., Hatsevych I. M., Romanyuk B. N., Shkavro A. G., Tretyak O. V. (2011)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000349502
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2011, Vol. 14, № 2)
Bunak S. V., Ilchenko V. V., Melnik V. P., Hatsevych I. M., Romanyuk B. N., Shkavro A. G., Tretyak O. V.
Electrical properties of MIS structures with silicon nanoclusters
Cite:
Bunak, S. V., Ilchenko, V. V., Melnik, V. P., Hatsevych, I. M., Romanyuk, B. N., Shkavro, A. G., Tretyak, O. V. (2011). Electrical properties of MIS structures with silicon nanoclusters. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (2), 241-246. http://jnas.nbuv.gov.ua/article/UJRN-0000349502 | |
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