Peculiarities of valence band formation in As-Ge-Se semiconductor glasses / Vakiv M., Golovchak R., Chalyy D., Shpotyuk M., Ubizskii S., Shpotyuk O. (2012)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000350283
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2012, Vol. 15, № 1)
Vakiv M., Golovchak R., Chalyy D., Shpotyuk M., Ubizskii S., Shpotyuk O.
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
Cite:
Vakiv, M., Golovchak, R., Chalyy, D., Shpotyuk, M., Ubizskii, S., Shpotyuk, O. (2012). Peculiarities of valence band formation in As-Ge-Se semiconductor glasses. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (1), 32-35. http://jnas.nbuv.gov.ua/article/UJRN-0000350283 | |
|
|
PDF