Tin doping effect on crystallization of amorphous silicon, obtained by vapor deposition in vacuum / Neimash V. B., Poroshin V. M., Shepeliavyi P. Ye., Yukhymchuk V. O., Melnyk V. V., Makara V. A., Kuzmich A. G. (2013)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000352346
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2013, Vol. 16, № 4)
Neimash V. B., Poroshin V. M., Shepeliavyi P. Ye., Yukhymchuk V. O., Melnyk V. V., Makara V. A., Kuzmich A. G.
Tin doping effect on crystallization of amorphous silicon, obtained by vapor deposition in vacuum
Cite:
Neimash, V. B., Poroshin, V. M., Shepeliavyi, P. Ye., Yukhymchuk, V. O., Melnyk, V. V., Makara, V. A., Kuzmich, A. G. (2013). Tin doping effect on crystallization of amorphous silicon, obtained by vapor deposition in vacuum. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (4), 331-335. http://jnas.nbuv.gov.ua/article/UJRN-0000352346 | |
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