The growth of weakly coupled graphene sheets from silicon carbide powder / Kiselov V. S., Lytvyn P. M., Nikolenko A. S., Strelchuk V. V., Stubrov Yu. Yu., Tryus M. P., Belyaev A. E. (2014)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000352939 Semiconductor physics, quantum electronics & optoelectronics А - 2019 / Випуск (2014, Vol. 17, № 3)
Kiselov V. S., Lytvyn P. M., Nikolenko A. S., Strelchuk V. V., Stubrov Yu. Yu., Tryus M. P., Belyaev A. E. The growth of weakly coupled graphene sheets from silicon carbide powder
Cite: Kiselov, V. S., Lytvyn, P. M., Nikolenko, A. S., Strelchuk, V. V., Stubrov, Yu. Yu., Tryus, M. P., Belyaev, A. E. (2014). The growth of weakly coupled graphene sheets from silicon carbide powder. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (3), 301-307. http://jnas.nbuv.gov.ua/article/UJRN-0000352939 |
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