Annealing-induced formation of Sn2P2S6 crystallites in As2S3-based glass matrix / Azhniuk Yu. M., Gomonnai A. V., Gomonnai O. O., Hasynets S. M., Kovac F., Lopushansky V. V., Petryshynets I., Rubish V. M., Zahn D. R. T. (2015)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000714269
Semiconductor physics quantum electronics & optoelectronics    А - 2019 /  Випуск (2015, Vol. 18, № 3)
Azhniuk Yu. M., Gomonnai A. V., Gomonnai O. O., Hasynets S. M., Kovac F., Lopushansky V. V., Petryshynets I., Rubish V. M., Zahn D. R. T.
Annealing-induced formation of Sn2P2S6 crystallites in As2S3-based glass matrix
Cite:
Azhniuk, Yu. M., Gomonnai, A. V., Gomonnai, O. O., Hasynets, S. M., Kovac, F., Lopushansky, V. V., Petryshynets, I., Rubish, V. M., Zahn, D. R. T. (2015). Annealing-induced formation of Sn2P2S6 crystallites in As2S3-based glass matrix. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (3), 248-254. http://jnas.nbuv.gov.ua/article/UJRN-0000714269 | |
|
|
PDF