Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons / Konoreva O. V., Lytovchenko M. V., Malyi Ye. V., Petrenko I. V., Pinkovska M. B., Tartachnyk V. P., Shlapatska V. V. (2015)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000714280
Semiconductor physics quantum electronics & optoelectronics    А - 2019 /  Випуск (2015, Vol. 18, № 3)
Konoreva O. V., Lytovchenko M. V., Malyi Ye. V., Petrenko I. V., Pinkovska M. B., Tartachnyk V. P., Shlapatska V. V.
Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons
Cite:
Konoreva, O. V., Lytovchenko, M. V., Malyi, Ye. V., Petrenko, I. V., Pinkovska, M. B., Tartachnyk, V. P., Shlapatska, V. V. (2015). Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (3), 312-316. http://jnas.nbuv.gov.ua/article/UJRN-0000714280 | |
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