інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000714487
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2017, Vol. 20, № 1)
Mustafaeva S. N., Jafarova S. G., Kerimova E. M., Gasanov N. Z., Asadov S. M.
Influence of the composition of (TlGaS2)1–х(TlInSe2)x solid solutions on their physical properties
Cite:
Mustafaeva, S. N., Jafarova, S. G., Kerimova, E. M., Gasanov, N. Z., Asadov, S. M. (2017). Influence of the composition of (TlGaS2)1–kh(TlInSe2)x solid solutions on their physical properties. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (1), 74-78. http://jnas.nbuv.gov.ua/article/UJRN-0000714487
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