Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient / Sabov T. M., Oberemok O. S., Dubikovskyi O. V., Melnik V. P., Kladko V. P., Romanyuk B. M., Popov V. G., Gudymenko O. Yo., Safriuk N. V. (2017)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000741617
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2017, Vol. 20, № 2)
Sabov T. M., Oberemok O. S., Dubikovskyi O. V., Melnik V. P., Kladko V. P., Romanyuk B. M., Popov V. G., Gudymenko O. Yo., Safriuk N. V.
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient
Cite:
Sabov, T. M., Oberemok, O. S., Dubikovskyi, O. V., Melnik, V. P., Kladko, V. P., Romanyuk, B. M., Popov, V. G., Gudymenko, O. Yo., Safriuk, N. V. (2017). Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (2), 153-158. http://jnas.nbuv.gov.ua/article/UJRN-0000741617 | |
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