інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000741636
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2017, Vol. 20, № 2)
Iliash S. A., Hyrka Yu. V., Kondratenko S. V., Lysenko V. S., Kozyrev Yu. M., Lendel V. V.
Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films
Cite:
Iliash, S. A., Hyrka, Yu. V., Kondratenko, S. V., Lysenko, V. S., Kozyrev, Yu. M., Lendel, V. V. (2017). Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (2), 259-261. http://jnas.nbuv.gov.ua/article/UJRN-0000741636
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