Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation / Neimash V. B., Melnyk V. V., Fedorenko L. L., Shepeliavyi P. Ye., Strelchuk V. V., Nikolayenko A. S., Isaiev M. V., Kuzmich A. G. (2017)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000806876
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2017, Vol. 20, № 4)
Neimash V. B., Melnyk V. V., Fedorenko L. L., Shepeliavyi P. Ye., Strelchuk V. V., Nikolayenko A. S., Isaiev M. V., Kuzmich A. G.
Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation
Cite:
Neimash, V. B., Melnyk, V. V., Fedorenko, L. L., Shepeliavyi, P. Ye., Strelchuk, V. V., Nikolayenko, A. S., Isaiev, M. V., Kuzmich, A. G. (2017). Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (4), 396-405. http://jnas.nbuv.gov.ua/article/UJRN-0000806876 | |
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