інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0001073625
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2019, Vol. 22, № 2)
Neimash V. B., Nikolenko A. S., Strelchuk V. V., Shepeliavyi P. Ye., Litvinchuk P. M., Melnyk V. V., Olhovik I. V.
Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon
Cite:
Neimash, V. B., Nikolenko, A. S., Strelchuk, V. V., Shepeliavyi, P. Ye., Litvinchuk, P. M., Melnyk, V. V., Olhovik, I. V. (2019). Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon. Semiconductor Physics, Quantum Electronics and Optoelectronics , 22 (2), 206-214. http://jnas.nbuv.gov.ua/article/UJRN-0001073625
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