Фізична інженерія поверхні. 2012, 10 (3) АРХІВ (Всі випуски) 
 | Фізична інженерія поверхні
2012. Вип. 3 |
- Титул.
- Зміст.
- Pogrebnjak A. D., Bratushka S, N., Levintant-Zayonts N., Malikov L. V. Influence of high-dose ion implantation of NiTi equiatomic on shape memory and pseudoelastic. - C. 244-255.
- Grygorchak I. I., Matulka D. V., Ivashchyshyn F. O., Zaichenko O. S., Mitina N. Ye., Moskvin M. M. Supramolecular assemblies of configuration inorganic semiconductor/oligomer. - C. 256-262.
- Sagalovych A., Dudnik S., Sagalovych V. Deposition of the stoichiometric coatings by reactive magnetron sputtering. - C. 263-272.
- Dudin S. V. Langmuir probe in ion-beam plasma: theory VS experiment. - C. 273-280.
- Bakhmatyuk B. P., Kurepa A. S. Hybrid electrochemical supercapacitors based on aqueous electrolyte solutions. - C. 281-285.
- Grudnitskiy V. V., Beresnev V. M., Drobyshevskaya А. А., Turbin P. V., Toryanik I. N., Grankin S. S., Kolesnikov D. А., Nemchenko U. S. Elemental and phase analysis of nanocomposite coatings on basis Ti-Hf-Si-N system received by the vacuum-arc deposition method. - C. 286-294.
- Jabua Z., Kupreishvili I., Gigineishvili A., Iluridze G., Minas T. The electrophysical and optical properties of gadolinium monoantimonide thin films. - C. 295-298.
- Drobyshevskaya А. А. Principles of multilayer functional coatings creation by combined deposition methods. - C. 299-302.
- Pylypiv V. M., Garpul О. Z., Kotsyubynsky V. O., Ostafiychuk B. K., Mokliak V. V., Kopcewicz M., Syvorotka І. І. Magnetic structure of subsurface layers of single crystalline yttrium-iron garnet films implanted with Si+ ions with various energies. - C. 303-307.
- Komenda T., Korovytskyy A., Misyuk S. Homogeneity estimation morphometric model for particle distribution on example of SiC deposited on multilayer structure Fe/NiP. - C. 308-313.
- Zhuravel I. O., Bugayev Ye. A., Konotopsky L. E., Zubarev E. M., Sevryukova V. A., Kondratenko V. V. Structural transformation in C/Si multilayer after annealing. - C. 314-318 .
- Правила оформления рукописей. - C. 319-321.
- Тематичні напрямки. - C. 322.
- Вихідні дані.
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