Hydrogen gettering in annealed oxygen-implanted silicon / Misiuk, A., Barcz, A., Ulyashin, A., Antonova, I. V., Prujszczyk, M. (2010)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349239
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2010, Vol. 13, № 2)
Misiuk A., Barcz A., Ulyashin A., Antonova I. V., Prujszczyk M.
Hydrogen gettering in annealed oxygen-implanted silicon
Cite:
Misiuk, A., Barcz, A., Ulyashin, A., Antonova, I. V., Prujszczyk, M. (2010). Hydrogen gettering in annealed oxygen-implanted silicon. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (2), 161-165. http://jnas.nbuv.gov.ua/article/UJRN-0000349239 | |
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