Relaxation process features of photoconductivity in p-i-n structures / Mumimov, R. A., Kanyazov, Sh. K., Saymbetov, A. K. (2010)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349316
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2010, Vol. 13, № 3)
Mumimov R. A., Kanyazov Sh. K., Saymbetov A. K.
Relaxation process features of photoconductivity in p-i-n structures
Cite:
Mumimov, R. A., Kanyazov, Sh. K., Saymbetov, A. K. (2010). Relaxation process features of photoconductivity in p-i-n structures. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (3), 259-261. http://jnas.nbuv.gov.ua/article/UJRN-0000349316 | |
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