Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / Tripathy, P. R., Mukherjee, M., Pati, S. P. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349483 Semiconductor Physics, Quantum Electronics and Optoelectronics А - 2019 / Issue (2011, Vol. 14, № 2)
Tripathy P. R., Mukherjee M., Pati S. P. Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency
Cite: Tripathy, P. R., Mukherjee, M., Pati, S. P. (2011). Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (2), 137-144. http://jnas.nbuv.gov.ua/article/UJRN-0000349483 |
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