The electric field gradient asymmetry parameter in InSe / Kovalyuk, Z. D., Khandozhko, A. G., Lastivka, G. I., Samila, A. P. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349487
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 2)
Kovalyuk Z. D., Khandozhko A. G., Lastivka G. I., Samila A. P.
The electric field gradient asymmetry parameter in InSe
Cite:
Kovalyuk, Z. D., Khandozhko, A. G., Lastivka, G. I., Samila, A. P. (2011). The electric field gradient asymmetry parameter in InSe. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (2), 164-166. http://jnas.nbuv.gov.ua/article/UJRN-0000349487 | |
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