Impact of sidewall spacer on gate leakage behavior of nano-scale MOSFETs / Rana, A. K., Chand, N., Kapoor, V. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349496
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 2)
Rana A. K., Chand N., Kapoor V.
Impact of sidewall spacer on gate leakage behavior of nano-scale MOSFETs
Cite:
Rana, A. K., Chand, N., Kapoor, V. (2011). Impact of sidewall spacer on gate leakage behavior of nano-scale MOSFETs. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (2), 203-208. http://jnas.nbuv.gov.ua/article/UJRN-0000349496 | |
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