The kinetic of point defect transformation during the annealing process in electron-irradiated silicon / Gaidar, G. P., Dolgolenko, A. P., Litovchenko, P. G. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349498
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 2)
Gaidar G. P., Dolgolenko A. P., Litovchenko P. G.
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
Cite:
Gaidar, G. P., Dolgolenko, A. P., Litovchenko, P. G. (2011). The kinetic of point defect transformation during the annealing process in electron-irradiated silicon. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (2), 213-221. http://jnas.nbuv.gov.ua/article/UJRN-0000349498 | |
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