Formation of silicon nanoclusters in buried ultra-thin oxide layers / Oberemok, O. S., Litovchenko, V. G., Gamov, D. V., Popov, V. G., Melnik, V. P., Gudymenko, O. Yo., Nikirin, V. A., Khatsevich, I. M. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349736 Semiconductor Physics, Quantum Electronics and Optoelectronics А - 2019 / Issue (2011, Vol. 14, № 3)
Oberemok O. S., Litovchenko V. G., Gamov D. V., Popov V. G., Melnik V. P., Gudymenko O. Yo., Nikirin V. A., Khatsevich І. M. Formation of silicon nanoclusters in buried ultra-thin oxide layers
Cite: Oberemok, O. S., Litovchenko, V. G., Gamov, D. V., Popov, V. G., Melnik, V. P., Gudymenko, O. Yo., Nikirin, V. A., Khatsevich, I. M. (2011). Formation of silicon nanoclusters in buried ultra-thin oxide layers. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (3), 269-272. http://jnas.nbuv.gov.ua/article/UJRN-0000349736 |
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