Formation of silicon nanoclusters in buried ultra-thin oxide layers / Oberemok O. S., Litovchenko V. G., Gamov D. V., Popov V. G., Melnik V. P., Gudymenko O. Yo., Nikirin V. A., Khatsevich І. M. (2011)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000349736
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2011, Vol. 14, № 3)
Oberemok O. S., Litovchenko V. G., Gamov D. V., Popov V. G., Melnik V. P., Gudymenko O. Yo., Nikirin V. A., Khatsevich І. M.
Formation of silicon nanoclusters in buried ultra-thin oxide layers
Cite:
Oberemok, O. S., Litovchenko, V. G., Gamov, D. V., Popov, V. G., Melnik, V. P., Gudymenko, O. Yo., Nikirin, V. A., Khatsevich, I. M. (2011). Formation of silicon nanoclusters in buried ultra-thin oxide layers. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (3), 269-272. http://jnas.nbuv.gov.ua/article/UJRN-0000349736 | |
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