Polarization conversion effect in obliquely deposited SiOx films / Sopinskyy, M. V., Indutnyi, I. Z., Michailovska, K. V., Shepeliavy, P. E., Tkach, V. M. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349737
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 3)
Sopinskyy M. V., Indutnyi I. Z., Michailovska K. V., Shepeliavy P. E., Tkach V. M.
Polarization conversion effect in obliquely deposited SiOx films
Cite:
Sopinskyy, M. V., Indutnyi, I. Z., Michailovska, K. V., Shepeliavy, P. E., Tkach, V. M. (2011). Polarization conversion effect in obliquely deposited SiOx films. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (3), 273-278. http://jnas.nbuv.gov.ua/article/UJRN-0000349737 | |
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