Characterization of quaternary chalcogenide As-Ge-Te-Si thin films / Amer, H. H., Elkordy, M., Zien, M., Dahshan, A., Elshamy, R. A. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349741
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 3)
Amer H. H., Elkordy M., Zien M., Dahshan A., Elshamy R. A.
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films
Cite:
Amer, H. H., Elkordy, M., Zien, M., Dahshan, A., Elshamy, R. A. (2011). Characterization of quaternary chalcogenide As-Ge-Te-Si thin films. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (3), 302-307. http://jnas.nbuv.gov.ua/article/UJRN-0000349741 | |
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