Tunneling current via dislocations in InAs and InSb infrared photodiodes / Sukach, A. V., Tetyorkin, V. V., Krolevec, N. M. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349822
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 4)
Sukach A. V., Tetyorkin V. V., Krolevec N. M.
Tunneling current via dislocations in InAs and InSb infrared photodiodes
Cite:
Sukach, A. V., Tetyorkin, V. V., Krolevec, N. M. (2011). Tunneling current via dislocations in InAs and InSb infrared photodiodes . Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (4), 416-420. http://jnas.nbuv.gov.ua/article/UJRN-0000349822 | |
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