Semiconductor physics, quantum electronics & optoelectronics. 2011, 14 (4) АРХІВ (Всі випуски)
| Semiconductor physics, quantum electronics & optoelectronics 2011. Вип. 4 |
- Title.
- Content.
- Bataiev M., Bataiev Y., Brillson L. Effect of proton irradiation on the parameters of AlGaN/GaN HEMTs. - C. 381-388.
- Gudymenko O. Yo., Kladko V. P., Yefanov O. M., Slobodian M. V., Polischuk Yu. S., Krasilnik Z. F., Lobanov D. V., Novikov А. А. Influence of small miscuts on self-ordered growth of Ge nanoislands. - C. 389-392.
- Gudyma Iu. V., Daskal Ye. M. High-temperature expansion in self-consistent-field theory of spin-crossover compounds. - C. 393-398.
- Ivashchenko O. M., Shwarts Yu. M., Shwarts M. M., Kopko D. P., Sypko M. I. Optimized calibration of cryogenic silicon thermodiodes. - C. 399-402.
- Ushenko O. G., Balanetska V. O., Zabolotna N. I. Jones-matrix diagnostics of the structure and classification of optical properties inherent to birefringent polycrystalline networks of human biological tissues. - C. 403-410.
- Zorenko A. V., Kudryk Ya. Ya., Marunenko Yu. V. Development and investigation of microwave radiation sources and detector sections using SBDs within the 220-400 GHz frequency range . - C. 411-415.
- Sukach A. V., Tetyorkin V. V., Krolevec N. M. Tunneling current via dislocations in InAs and InSb infrared photodiodes . - C. 416-420.
- Kosyachenko L. A., Rarenko I. M., Aoki T., Sklyarchuk V. M., Maslyanchuk O. L., Yurtsenyuk N. S., Zakharuk Z. І. Energy band gap and electrical conductivity of Cd1-xMnxTe alloys with different manganese content. - C. 421-426.
- Brus V. V., Kovalyuk Z. D., Parfenyuk O. A., Vakhnyak N. D. Comparison of optical properties of TiO2 thin films prepared by reactive magnetron sputtering and electron-beam evaporation techniques. - C. 427-431.
- Vlaskina S. I., Mishinova G. N., Vlaskin V. I., Rodionov V. E., Svechnikov G. S. 3C-6H transformation in heated cubic silicon carbide 3C-SiC. - C. 432-436 .
- Boiko I. I. Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium. - C. 437-440.
- Kobeleva O. I., Valova T. M., Ait A. O., Barachevsky V. A., Grytsenko K. P., Machulin V. F., Krayushkin M. M. Photochromic properties of composite films of thermally irreversible diarylethenes and fulgimides in polytetrafluoroethylene matrix. - C. 441-444.
- Severin V. S. Influence of polarization of conduction electrons in semiconductor on their light absorption. - C. 445-451.
- Kovalchuk O. V. Adsorption of ions and thickness dependence of conductivity in liquid crystals. - C. 452-455.
- Dolgolenko A. P., Druzhinin A. A., Karpenko A. Ya., Nichkalo S. I., Ostrovsky I. P., Litovchenko P. G., Litovchenko A. P. Seebeck's effect in p-SiGe whisker samples. - C. 456-460.
- Marchylo O. M., Zavyalova L. V., Nakanishi Y., Kominami H., Belyaev A. E., Svechnikov G. S. Investigation of luminescent properties inherent to SrTiO3:Pr3+ luminophor with Al impurity. - C. 461-464.
- Belyaev A. E., Boltovets N. S., Konakova R. V., Kudryk Ya. Ya., Sorokin V. M., Sheremet V. N., Shynkarenko V. V. Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes. - C. 465-469.
- Vladimirova T. P., Kyslovs`kyy Ye. M., Molodkin V. B., Olikhovskii S. I., Koplak O. V., Kochelab E. V. Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field. - C. 470-477.
- Gavrysh V. I. Modelling of temperature conditions in the three-dimensional piecewise homogeneous elements of microelectronic devices. - C. 478-481.
- Ignatyeva T. A. Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities. - C. 482-488.
- Lozovski V., Lysenko V., Pyatnitsia V., Spivak M. Can nanoparticles be useful for antiviral therapy? . - C. 489-491.
- Author Index 2011 (Volume 14). - C. 492-502.
|
|