3C-6H transformation in heated cubic silicon carbide 3C-SiC / Vlaskina, S. I., Mishinova, G. N., Vlaskin, V. I., Rodionov, V. E., Svechnikov, G. S. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349825
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 4)
Vlaskina S. I., Mishinova G. N., Vlaskin V. I., Rodionov V. E., Svechnikov G. S.
3C-6H transformation in heated cubic silicon carbide 3C-SiC
Cite:
Vlaskina, S. I., Mishinova, G. N., Vlaskin, V. I., Rodionov, V. E., Svechnikov, G. S. (2011). 3C-6H transformation in heated cubic silicon carbide 3C-SiC. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (4), 432-436 . http://jnas.nbuv.gov.ua/article/UJRN-0000349825 | |
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