Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts / Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Kapitanchuk, L. M., Kladko, V. P., Konakova, R. V., Kuchuk, A. V., Korostinskaya, T. V., Pilipchuk, A. S., Sheremet, V. N., Mazur, Yu. I., Ware, M. E., Salamo, G. J. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352344
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2013, Vol. 16, № 4)
Sachenko A. V., Belyaev A. E., Boltovets N. S., Kapitanchuk L. M., Klad'ko V. P., Konakova R. V., Kuchuk A. V., Korostinskaya T. V., Pilipchuk A. S., Sheremet V. N., Mazur Yu. I., Ware M. E., Salamo G. J.
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts
Cite:
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Kapitanchuk, L. M., Kladko, V. P., Konakova, R. V., Kuchuk, A. V., Korostinskaya, T. V., Pilipchuk, A. S., Sheremet, V. N., Mazur, Yu. I., Ware, M. E., Salamo, G. J. (2013). Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (4), 313-321. http://jnas.nbuv.gov.ua/article/UJRN-0000352344 | |
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