Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts / Sachenko A. V., Belyaev A. E., Boltovets N. S., Kapitanchuk L. M., Klad'ko V. P., Konakova R. V., Kuchuk A. V., Korostinskaya T. V., Pilipchuk A. S., Sheremet V. N., Mazur Yu. I., Ware M. E., Salamo G. J. (2013)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000352344
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2013, Vol. 16, № 4)
Sachenko A. V., Belyaev A. E., Boltovets N. S., Kapitanchuk L. M., Klad'ko V. P., Konakova R. V., Kuchuk A. V., Korostinskaya T. V., Pilipchuk A. S., Sheremet V. N., Mazur Yu. I., Ware M. E., Salamo G. J.
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts
Cite:
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Kapitanchuk, L. M., Kladko, V. P., Konakova, R. V., Kuchuk, A. V., Korostinskaya, T. V., Pilipchuk, A. S., Sheremet, V. N., Mazur, Yu. I., Ware, M. E., Salamo, G. J. (2013). Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (4), 313-321. http://jnas.nbuv.gov.ua/article/UJRN-0000352344 | |
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