Graphene layers fabricated from the Ni/a-SiC bilayer precursor / Nazarov, A. N., Vasin, A. V., Gordienko, S. O., Lytvyn, P. M., Strelchuk, V. V., Nikolenko, A. S., Hirov, A. S., Rusavsky, A. V., Popov, V. P., Lysenko, V. S. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352345
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2013, Vol. 16, № 4)
Nazarov A. N., Vasin A. V., Gordienko S. O., Lytvyn P. M., Strelchuk V. V., Nikolenko A. S., Hirov A. S., Rusavsky A. V., Popov V. P., Lysenko V. S.
Graphene layers fabricated from the Ni/a-SiC bilayer precursor
Cite:
Nazarov, A. N., Vasin, A. V., Gordienko, S. O., Lytvyn, P. M., Strelchuk, V. V., Nikolenko, A. S., Hirov, A. S., Rusavsky, A. V., Popov, V. P., Lysenko, V. S. (2013). Graphene layers fabricated from the Ni/a-SiC bilayer precursor . Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (4), 332-330. http://jnas.nbuv.gov.ua/article/UJRN-0000352345 | |
|
|
PDF