Influence of high temperature annealing on the structure and the intrinsic absorption edge of thin-film silicon doped with tin / Rudenko, R. M., Voitovych, V. V., Krasko, M. M., Kolosyuk, A. G., Kraichynskyi, A. M., Yukhymchuk, V. O., Makara, V. A. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000690902
Ukrainian journal of physics   А - 2018 /  Issue (2013, Vol. 58, № 8)
Rudenko R. M., Voitovych V. V., Kras'ko M. M., Kolosyuk A. G., Kraichynskyi A. M., Yukhymchuk V. O., Makara V. A.
Influence of high temperature annealing on the structure and the intrinsic absorption edge of thin-film silicon doped with tin
Cite:
Rudenko, R. M., Voitovych, V. V., Krasko, M. M., Kolosyuk, A. G., Kraichynskyi, A. M., Yukhymchuk, V. O., Makara, V. A. (2013). Influence of high temperature annealing on the structure and the intrinsic absorption edge of thin-film silicon doped with tin. Ukrainian journal of physics, 58 (8), 769-772. http://jnas.nbuv.gov.ua/article/UJRN-0000690902 | |
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