Hall-effect study of disordered regions in proton-irradiated n-Si crystals / Pagava, T. A., Beridze, M. G., Maisuradze, N. I., Chkhartishvili, L. S., Kalandadze, I. G. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000690903
Ukrainian journal of physics   А - 2018 /  Issue (2013, Vol. 58, № 8)
Pagava T. A., Beridze M. G., Maisuradze N. I., Chkhartishvili L. S., Kalandadze I. G.
Hall-effect study of disordered regions in proton-irradiated n-Si crystals
Cite:
Pagava, T. A., Beridze, M. G., Maisuradze, N. I., Chkhartishvili, L. S., Kalandadze, I. G. (2013). Hall-effect study of disordered regions in proton-irradiated n-Si crystals. Ukrainian journal of physics, 58 (8), 773-779. http://jnas.nbuv.gov.ua/article/UJRN-0000690903 | |
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