Behavior of hydrogen during crystallization of thin silicon films doped with tin / Rudenko, R. M., Krasko, M. M., Voitovych, V. V., Kolosyuk, A. G., Povarchuk, V. Yu., Kraichynskyi, A. M., Yukhymchuck, V. O., Bratus, V. Ya., Voitovych, M. V., Zaloilo, I. A. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000691663
Ukrainian journal of physics   А - 2018 /  Issue (2013, Vol. 58, № 12)
Rudenko R. M., Kras'ko M. M., Voitovych V. V., Kolosyuk A. G., Povarchuk V. Yu., Kraichynskyi A. M., Yukhymchuck V. O., Bratus' V. Ya., Voitovych M. V., Zaloilo I. A.
Behavior of hydrogen during crystallization of thin silicon films doped with tin
Cite:
Rudenko, R. M., Krasko, M. M., Voitovych, V. V., Kolosyuk, A. G., Povarchuk, V. Yu., Kraichynskyi, A. M., Yukhymchuck, V. O., Bratus, V. Ya., Voitovych, M. V., Zaloilo, I. A. (2013). Behavior of hydrogen during crystallization of thin silicon films doped with tin. Ukrainian journal of physics, 58 (12), 1165-1170. http://jnas.nbuv.gov.ua/article/UJRN-0000691663 | |
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