Behavior of hydrogen during crystallization of thin silicon films doped with tin / Rudenko R. M., Kras'ko M. M., Voitovych V. V., Kolosyuk A. G., Povarchuk V. Yu., Kraichynskyi A. M., Yukhymchuck V. O., Bratus' V. Ya., Voitovych M. V., Zaloilo I. A. (2013)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000691663
Ukrainian journal of physics   А - 2018 /  Випуск (2013, Vol. 58, № 12)
Rudenko R. M., Kras'ko M. M., Voitovych V. V., Kolosyuk A. G., Povarchuk V. Yu., Kraichynskyi A. M., Yukhymchuck V. O., Bratus' V. Ya., Voitovych M. V., Zaloilo I. A.
Behavior of hydrogen during crystallization of thin silicon films doped with tin
Cite:
Rudenko, R. M., Krasko, M. M., Voitovych, V. V., Kolosyuk, A. G., Povarchuk, V. Yu., Kraichynskyi, A. M., Yukhymchuck, V. O., Bratus, V. Ya., Voitovych, M. V., Zaloilo, I. A. (2013). Behavior of hydrogen during crystallization of thin silicon films doped with tin. Ukrainian journal of physics, 58 (12), 1165-1170. http://jnas.nbuv.gov.ua/article/UJRN-0000691663 | |
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