Voids' layer structures in silicon irradiated with high doses of high-energy helium ions / Starchyk, M. I., Marchenko, L. S., Pinkovska, M. B., Shmatko, G. G., Varnina, V. I. (2015)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714276
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2015, Vol. 18, № 3)
Starchyk M. I., Marchenko L. S., Pinkovska M. B., Shmatko G. G., Varnina V. I.
Voids' layer structures in silicon irradiated with high doses of high-energy helium ions
Cite:
Starchyk, M. I., Marchenko, L. S., Pinkovska, M. B., Shmatko, G. G., Varnina, V. I. (2015). Voids' layer structures in silicon irradiated with high doses of high-energy helium ions. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (3), 292-296. http://jnas.nbuv.gov.ua/article/UJRN-0000714276 | |
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