Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing / Fomin, A. V., Pashchenko, G. A., Kravetskyi, M. Yu., Lutsyshyn, I. G. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714494
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2017, Vol. 20, № 1)
Fomin A. V., Pashchenko G. A., Kravetskyi M. Yu., Lutsyshyn I. G.
Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing
Cite:
Fomin, A. V., Pashchenko, G. A., Kravetskyi, M. Yu., Lutsyshyn, I. G. (2017). Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (1), 118-122. http://jnas.nbuv.gov.ua/article/UJRN-0000714494 | |
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