Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals / Gaidar, G. P., Baranskii, P. I. (2017)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714495
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2017, Vol. 20, № 1)

Gaidar G. P., Baranskii P. I.
Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals

Cite:
Gaidar, G. P., Baranskii, P. I. (2017). Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (1), 123-128. http://jnas.nbuv.gov.ua/article/UJRN-0000714495

 

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