web address of the page
http://jnas.nbuv.gov.ua/article/UJRN-0000714525
Semiconductor Physics, Quantum Electronics and Optoelectronics А - 2019 /
Issue (2016, Vol. 19, № 1)
Parphenyuk P. V., Evtukh A. A.
Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
Cite:
Parphenyuk, P. V., Evtukh, A. A. (2016). Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review). Semiconductor Physics, Quantum Electronics and Optoelectronics , 19 (1), 1-8. http://jnas.nbuv.gov.ua/article/UJRN-0000714525