Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) / Parphenyuk, P. V., Evtukh, A. A. (2016)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714525
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2016, Vol. 19, № 1)

Parphenyuk P. V., Evtukh A. A.
Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)

Cite:
Parphenyuk, P. V., Evtukh, A. A. (2016). Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review). Semiconductor Physics, Quantum Electronics and Optoelectronics , 19 (1), 1-8. http://jnas.nbuv.gov.ua/article/UJRN-0000714525

 

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