Features of tensoresistance in single crystals of germanium and silicon with different dopants / Baranskii, P. I., Gaidar, G. P. (2016)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714531
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2016, Vol. 19, № 1)

Baranskii P. I., Gaidar G. P.
Features of tensoresistance in single crystals of germanium and silicon with different dopants

Cite:
Baranskii, P. I., Gaidar, G. P. (2016). Features of tensoresistance in single crystals of germanium and silicon with different dopants. Semiconductor Physics, Quantum Electronics and Optoelectronics , 19 (1), 39-43. http://jnas.nbuv.gov.ua/article/UJRN-0000714531

 

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