Electronic structure of 2H-SnSe2: ab initio modeling and comparison with experiment / Bletskan, D. I., Glukhov, K. E., Frolova, V. V. (2016)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714542
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2016, Vol. 19, № 1)
Bletskan D. I., Glukhov K. E., Frolova V. V.
Electronic structure of 2H-SnSe2: ab initio modeling and comparison with experiment
Cite:
Bletskan, D. I., Glukhov, K. E., Frolova, V. V. (2016). Electronic structure of 2H-SnSe2: ab initio modeling and comparison with experiment. Semiconductor Physics, Quantum Electronics and Optoelectronics , 19 (1), 98-108. http://jnas.nbuv.gov.ua/article/UJRN-0000714542 | |
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