Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer / Sachenko, A. V., Kostylov, V. P., Lytovchenko, V. H., Popov, V. H., Romaniuk, B. M., Chernenko, V. V., Nasieka, V. M., Slusar, T. V., Kyrylova, S. I., Komarov, F. F. (2013)
Ukrainian

English  Ukrainian Journal of Physics   /     Issue (2013, 58 (2))

Sachenko A. V., Kostylov V. P., Lytovchenko V. H., Popov V. H., Romaniuk B. M., Chernenko V. V., Nasieka V. M., Slusar T. V., Kyrylova S. I., Komarov F. F.
Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer


Cite:
Sachenko, A. V., Kostylov, V. P., Lytovchenko, V. H., Popov, V. H., Romaniuk, B. M., Chernenko, V. V., Nasieka, V. M., Slusar, T. V., Kyrylova, S. I., Komarov, F. F. (2013). Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer. Ukrainian Journal of Physics, 58 (2), 142-150. http://jnas.nbuv.gov.ua/article/UJRN-0000725395 [In Ukrainian].

 

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