Influence of high temperature annealing on the structure and the intrinsic absorption edge of thin-film silicon doped with tin / Rudenko, R. M., Voitovych, V. V., Krasko, M. M., Kolosiuk, A. H., Kraichynskyi, A. M., Yukhymchuk, V. O., Makara, V. A. (2013)
Ukrainian

English  Ukrainian Journal of Physics   /     Issue (2013, 58 (8))

Rudenko R. M., Voitovych V. V., Krasko M. M., Kolosiuk A. H., Kraichynskyi A. M., Yukhymchuk V. O., Makara V. A.
Influence of high temperature annealing on the structure and the intrinsic absorption edge of thin-film silicon doped with tin


Cite:
Rudenko, R. M., Voitovych, V. V., Krasko, M. M., Kolosiuk, A. H., Kraichynskyi, A. M., Yukhymchuk, V. O., Makara, V. A. (2013). Influence of high temperature annealing on the structure and the intrinsic absorption edge of thin-film silicon doped with tin. Ukrainian Journal of Physics, 58 (8), 770-774. http://jnas.nbuv.gov.ua/article/UJRN-0000725577 [In Ukrainian].

 

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