Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films / Ilchenko, V. V., Kostiukevych, O. M., Lendiel, V. V., Radko, V. I., Holoborodko, N. S. (2016)
Ukrainian

English  Ukrainian Journal of Physics   /     Issue (2016, 61 (1))

Ilchenko V. V., Kostiukevych O. M., Lendiel V. V., Radko V. I., Holoborodko N. S.
Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films


Cite:
Ilchenko, V. V., Kostiukevych, O. M., Lendiel, V. V., Radko, V. I., Holoborodko, N. S. (2016). Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films. Ukrainian Journal of Physics, 61 (1), 40-45. http://jnas.nbuv.gov.ua/article/UJRN-0000727701 [In Ukrainian].

 

Institute of Information Technologies of VNLU


+38 (044) 525-36-24
Ukraine, 03039, Kyiv, Holosiivskyi Ave, 3, room 209