New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures / Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M., Aleinikov, A. B. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000741624
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2017, Vol. 20, № 2)
Borblik V. L., Shwarts Yu. M., Shwarts M. M., Aleinikov A. B.
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
Cite:
Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M., Aleinikov, A. B. (2017). New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (2), 195-198. http://jnas.nbuv.gov.ua/article/UJRN-0000741624 | |
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