Photosensitivity and current flow mechanism in p-CdTe-SiO2-Si heterostructures with deep impurity levels / Zhuraev, N., Khalilov, M., Otazhonov, S., Alimov, N. (2017)
| Zhurnal fizyky ta inzhenerii poverkhni / Issue (2017, 2 (1))
Zhuraev N., Khalilov M., Otazhonov S., Alimov N. Photosensitivity and current flow mechanism in p-CdTe-SiO2-Si heterostructures with deep impurity levels
Cite: Zhuraev, N., Khalilov, M., Otazhonov, S., Alimov, N. (2017). Photosensitivity and current flow mechanism in p-CdTe-SiO2-Si heterostructures with deep impurity levels. Zhurnal fizyky ta inzhenerii poverkhni, 2 (1), 26-29. http://jnas.nbuv.gov.ua/article/UJRN-0000838914 [In Russian]. |
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