Relaxation of excess minority carrier distribution in macroporous silicon / Karachevtseva, L. A., Onyshchenko, V. F. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000888940
Chemistry, physics and technology of surface  А - 2022 /  Issue (2018, Т. 9, № 2)
Karachevtseva L. A., Onyshchenko V. F.
Relaxation of excess minority carrier distribution in macroporous silicon
Cite:
Karachevtseva, L. A., Onyshchenko, V. F. (2018). Relaxation of excess minority carrier distribution in macroporous silicon. Chemistry, physics and technology of surface, 9 (2), 158-166. http://jnas.nbuv.gov.ua/article/UJRN-0000888940 | |
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